STMicroelectronics MDmesh M2 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 3-Pin TO-263

STMicroelectronics MDmesh M2 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 3-Pin TO-263

Manufacturer:
Manufacturer Part No:
STB18N60M2
Enrgtech Part No:
ET11402331
Warranty:
Manufacturer
SAR 1.09 SAR 1.09
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
13A
Maximum Drain Source Voltage Vds:
650V
Series:
MDmesh M2
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
280mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.6V
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
25 V
Maximum Power Dissipation Pd:
110W
Typical Gate Charge Qg @ Vgs:
21.5nC
Maximum Operating Temperature:
150°C
Height:
4.6mm
Width:
9.35 mm
Standards/Approvals:
No
Length:
10.4mm
Automotive Standard:
No
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0900766b812824f9.pdf(datasheets)
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0900766b81644fb3.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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