irlb3813pbf Infineon HEXFET Type N-Channel MOSFET, 260 A, 30 V Enhancement, 3-Pin TO-220 IRLB3813PBF

Infineon HEXFET Type N-Channel MOSFET, 260 A, 30 V Enhancement, 3-Pin TO-220 IRLB3813PBF

For more information please check the datasheets.

Infineon HEXFET Type N-Channel MOSFET, 260 A, 30 V Enhancement, 3-Pin TO-220 IRLB3813PBF

Manufacturer:

Infineon

Manufacturer Part No:

IRLB3813PBF

Enrgtech Part No:

ET101079703

Warranty:

Manufacturer

SAR 1.26

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

260A

Maximum Drain Source Voltage Vds:

30V

Package Type:

TO-220

Series:

HEXFET

Mount Type:

Through Hole

Pin Count:

Maximum Drain Source Resistance Rds:

2mΩ

Channel Mode:

Enhancement

Maximum Gate Source Voltage Vgs:

20 V

Maximum Power Dissipation Pd:

230W

0900766b80f35036.pdf(datasheets)

0900766b81644fb4.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Infineon HEXFET Type N-Channel MOSFET, 260 A, 30 V Enhancement, 3-Pin TO-220 IRLB3813PBF

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