siss5623dn-t1-ge3 Vishay SiSS5623DN Type P-Channel MOSFET, 36.3 A, 60 V Enhancement, 8-Pin 1212-8S SISS5623DN-T1-GE3

Vishay SiSS5623DN Type P-Channel MOSFET, 36.3 A, 60 V Enhancement, 8-Pin 1212-8S SISS5623DN-T1-GE3

For more information please check the datasheets.

Vishay SiSS5623DN Type P-Channel MOSFET, 36.3 A, 60 V Enhancement, 8-Pin 1212-8S SISS5623DN-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SISS5623DN-T1-GE3

Enrgtech Part No:

ET101037577

Warranty:

Manufacturer

SAR 1.86

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Product Type:

MOSFET

Channel Type:

Type P

Maximum Continuous Drain Current Id:

36.3A

Maximum Drain Source Voltage Vds:

60V

Package Type:

1212-8S

Series:

SiSS5623DN

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.046Ω

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Maximum Gate Source Voltage Vgs:

20 V

A700000010766921.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SiSS5623DN Type P-Channel MOSFET, 36.3 A, 60 V Enhancement, 8-Pin 1212-8S SISS5623DN-T1-GE3

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