Infineon HEXFET Type N-Channel MOSFET, 18 A, 150 V Enhancement, 7-Pin DirectFET AUIRF7675M2TR

Infineon HEXFET Type N-Channel MOSFET, 18 A, 150 V Enhancement, 7-Pin DirectFET AUIRF7675M2TR

Manufacturer:
Manufacturer Part No:
AUIRF7675M2TR
Enrgtech Part No:
ET101018115
Warranty:
Manufacturer
SAR 1.84 SAR 1.84
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
18A
Maximum Drain Source Voltage Vds:
150V
Package Type:
DirectFET
Series:
HEXFET
Mount Type:
Surface
Pin Count:
7
Maximum Drain Source Resistance Rds:
56mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Typical Gate Charge Qg @ Vgs:
21nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
45W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Width:
5.05 mm
Length:
6.35mm
Height:
0.74mm
Standards/Approvals:
No
Automotive Standard:
AEC-Q101
pdf icon
A700000007726659.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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