onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC FDS6912A

onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC FDS6912A

Manufacturer:
Manufacturer Part No:
FDS6912A
Enrgtech Part No:
ET101009307
Warranty:
Manufacturer
SAR 0.33 SAR 0.33
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
6A
Maximum Drain Source Voltage Vds:
30V
Series:
PowerTrench
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
44mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
1.6W
Forward Voltage Vf:
305V ac
Typical Gate Charge Qg @ Vgs:
5.8nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Transistor Configuration:
Isolated
Length:
5mm
Width:
4 mm
Height:
1.5mm
Standards/Approvals:
No
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b81185cce.pdf(datasheets)
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0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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