Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3

Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3

Manufacturer:
Manufacturer Part No:
SIHK105N60E-T1-GE3
Enrgtech Part No:
ET101004904
Warranty:
Manufacturer
SAR 4.97 SAR 4.97
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
24A
Maximum Drain Source Voltage Vds:
650V
Package Type:
PowerPAK 10 x 12
Series:
SIHK
Mount Type:
PCB
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.1Ω
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Gate Source Voltage Vgs:
3.4Mbit/s
Maximum Power Dissipation Pd:
132W
Typical Gate Charge Qg @ Vgs:
PSI
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS
Length:
9.9mm
Automotive Standard:
No
pdf icon
A700000009890888.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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