sir5710dp-t1-re3 Vishay SiR Type N-Channel MOSFET, 26.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3

Vishay SiR Type N-Channel MOSFET, 26.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3

For more information please check the datasheets.

Vishay SiR Type N-Channel MOSFET, 26.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3

Manufacturer:

Vishay

Manufacturer Part No:

SIR5710DP-T1-RE3

Enrgtech Part No:

ET101004798

Warranty:

Manufacturer

SAR 1.43

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

26.8A

Maximum Drain Source Voltage Vds:

150V

Series:

SiR

Package Type:

PowerPAK SO-8

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.0315Ω

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Typical Gate Charge Qg @ Vgs:

15nC

A700000009890787.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SiR Type N-Channel MOSFET, 26.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3

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