sis112ldn-t1-ge3 Vishay SIS Type N-Channel MOSFET, 8.8 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3

Vishay SIS Type N-Channel MOSFET, 8.8 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3

For more information please check the datasheets.

Vishay SIS Type N-Channel MOSFET, 8.8 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SIS112LDN-T1-GE3

Enrgtech Part No:

ET101004786

Warranty:

Manufacturer

SAR 0.48

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

8.8A

Maximum Drain Source Voltage Vds:

100V

Package Type:

PowerPAK 1212-8

Series:

SIS

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.119Ω

Channel Mode:

Enhancement

Maximum Power Dissipation Pd:

19.8W

Typical Gate Charge Qg @ Vgs:

11.8nC

A700000009890896.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SIS Type N-Channel MOSFET, 8.8 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3

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