sihb085n60ef-ge3 Vishay SIHB Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3

Vishay SIHB Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3

For more information please check the datasheets.

Vishay SIHB Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SIHB085N60EF-GE3

Enrgtech Part No:

ET100995498

Warranty:

Manufacturer

SAR 7.14

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Channel Type:

Type N

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

34A

Maximum Drain Source Voltage Vds:

650V

Package Type:

TO-263

Series:

SIHB

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.084Ω

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Maximum Gate Source Voltage Vgs:

3.4Mbit/s

A700000009889830.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay SIHB Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3

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