Nexperia PSM Type N-Channel MOSFET, 200 A, 25 V Enhancement, 5-Pin LFPAK PSMN1R7-25YLDX

Nexperia PSM Type N-Channel MOSFET, 200 A, 25 V Enhancement, 5-Pin LFPAK PSMN1R7-25YLDX

Manufacturer:
Manufacturer Part No:
PSMN1R7-25YLDX
Enrgtech Part No:
ET100955779
Warranty:
Manufacturer
SAR 0.90 SAR 0.90
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
200A
Maximum Drain Source Voltage Vds:
25V
Package Type:
LFPAK
Series:
PSM
Mount Type:
Surface
Pin Count:
5
Maximum Drain Source Resistance Rds:
1.75mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
10 V
Typical Gate Charge Qg @ Vgs:
46.7nC
Maximum Power Dissipation Pd:
135W
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
175°C
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000012485526.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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