onsemi FDP Type N-Channel MOSFET, 128 A, 100 V Enhancement, 3-Pin TO-220 FDP4D5N10C

onsemi FDP Type N-Channel MOSFET, 128 A, 100 V Enhancement, 3-Pin TO-220 FDP4D5N10C

Manufacturer:
Manufacturer Part No:
FDP4D5N10C
Enrgtech Part No:
ET100954563
Warranty:
Manufacturer
SAR 3.57 SAR 3.57
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
128A
Maximum Drain Source Voltage Vds:
100V
Series:
FDP
Package Type:
TO-220
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
4.5mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.3V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
3.65kΩ
Maximum Power Dissipation Pd:
150W
Maximum Operating Temperature:
175°C
Length:
10.36mm
Standards/Approvals:
No
Width:
4.67 mm
Height:
15.21mm
Automotive Standard:
No
pdf icon
0900766b81699e22.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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