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ipd530n15n3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 21 A, 150 V Enhancement, 3-Pin TO-252 IPD530N15N3GATMA1
ipd530n15n3gatma1 Infineon OptiMOS 3 Type N-Channel MOSFET, 21 A, 150 V Enhancement, 3-Pin TO-252 IPD530N15N3GATMA1

Infineon OptiMOS 3 Type N-Channel MOSFET, 21 A, 150 V Enhancement, 3-Pin TO-252 IPD530N15N3GATMA1

Infineon OptiMOS 3 Type N-Channel MOSFET, 21 A, 150 V Enhancement, 3-Pin TO-252 IPD530N15N3GATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD530N15N3GATMA1
Enrgtech Part No:
ET100945410
Warranty:
Manufacturer
SAR 0.66 SAR 0.66
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
21A
Maximum Drain Source Voltage Vds:
150V
Package Type:
TO-252
Series:
OptiMOS 3
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
53mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
8.7nC
Maximum Power Dissipation Pd:
68W
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
175°C
Length:
6.65mm
Standards/Approvals:
No
Height:
2.35mm
Width:
6.42 mm
Automotive Standard:
No
pdf icon
A700000007367197.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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