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ipd70n12s311atma1 Infineon OptiMOS-T Type N-Channel MOSFET, 70 A, 120 V Enhancement, 3-Pin TO-252 IPD70N12S311ATMA1
ipd70n12s311atma1 Infineon OptiMOS-T Type N-Channel MOSFET, 70 A, 120 V Enhancement, 3-Pin TO-252 IPD70N12S311ATMA1

Infineon OptiMOS-T Type N-Channel MOSFET, 70 A, 120 V Enhancement, 3-Pin TO-252 IPD70N12S311ATMA1

Infineon OptiMOS-T Type N-Channel MOSFET, 70 A, 120 V Enhancement, 3-Pin TO-252 IPD70N12S311ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD70N12S311ATMA1
Enrgtech Part No:
ET100945378
Warranty:
Manufacturer
SAR 0.97 SAR 0.97
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
70A
Maximum Drain Source Voltage Vds:
120V
Package Type:
TO-252
Series:
https://www.traceparts.com/els/rs-components/en/api/viewer/3d?SupplierID=RS_COMPONENTS&PartNumber=2339418&DisplayLogo=False
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
11.1mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
125W
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
F93
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
175°C
Height:
2.35mm
Width:
6.42 mm
Length:
6.65mm
Standards/Approvals:
No
Automotive Standard:
AEC-Q101
pdf icon
A700000007367961.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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