Infineon OptiMOS Type N-Channel MOSFET, 180 A, 100 V N, 7-Pin TO-263 IPB017N10N5LFATMA1

Infineon OptiMOS Type N-Channel MOSFET, 180 A, 100 V N, 7-Pin TO-263 IPB017N10N5LFATMA1

Manufacturer:
Manufacturer Part No:
IPB017N10N5LFATMA1
Enrgtech Part No:
ET100945240
Warranty:
Manufacturer
SAR 4.91 SAR 4.91
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
180A
Maximum Drain Source Voltage Vds:
100V
Package Type:
TO-263
Series:
OptiMOS
Mount Type:
Surface
Pin Count:
7
Maximum Drain Source Resistance Rds:
1.7mΩ
Channel Mode:
N
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Maximum Power Dissipation Pd:
313W
Typical Gate Charge Qg @ Vgs:
195nC
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Height:
4.57mm
Width:
4.5 x 3.2 x 1.02mm
Length:
10.31mm
Automotive Standard:
No
pdf icon
A700000007366785.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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