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ipd30n06s2l13atma4 Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252 IPD30N06S2L13ATMA4
ipd30n06s2l13atma4 Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252 IPD30N06S2L13ATMA4

Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252 IPD30N06S2L13ATMA4

Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252 IPD30N06S2L13ATMA4

Manufacturer:
Infineon
Manufacturer Part No:
IPD30N06S2L13ATMA4
Enrgtech Part No:
ET100945214
Warranty:
Manufacturer
SAR 0.62 SAR 0.62
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
30A
Maximum Drain Source Voltage Vds:
55V
Package Type:
TO-252
Series:
OptiMOS
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
13mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.3V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
6.49kΩ
Maximum Power Dissipation Pd:
136W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Length:
6.65mm
Height:
2.35mm
Width:
6.42 mm
Standards/Approvals:
No
Automotive Standard:
AEC-Q101
pdf icon
A700000007367681.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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