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ipd50r2k0ceauma1 Infineon 500V CoolMOS CE Type N-Channel MOSFET, 2.2 A, 500 V Enhancement, 3-Pin TO-252 IPD50R2K0CEAUMA1
ipd50r2k0ceauma1 Infineon 500V CoolMOS CE Type N-Channel MOSFET, 2.2 A, 500 V Enhancement, 3-Pin TO-252 IPD50R2K0CEAUMA1

Infineon 500V CoolMOS CE Type N-Channel MOSFET, 2.2 A, 500 V Enhancement, 3-Pin TO-252 IPD50R2K0CEAUMA1

Infineon 500V CoolMOS CE Type N-Channel MOSFET, 2.2 A, 500 V Enhancement, 3-Pin TO-252 IPD50R2K0CEAUMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD50R2K0CEAUMA1
Enrgtech Part No:
ET100945210
Warranty:
Manufacturer
SAR 0.18 SAR 0.18
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
2.2A
Maximum Drain Source Voltage Vds:
500V
Series:
500V CoolMOS CE
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
2Ω
Channel Mode:
Enhancement
Forward Voltage Vf:
2 x 2 x 0.5mm
Typical Gate Charge Qg @ Vgs:
6nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
33W
Maximum Operating Temperature:
150°C
Width:
6.42 mm
Standards/Approvals:
No
Height:
2.35mm
Length:
6.65mm
Automotive Standard:
No
pdf icon
A700000007368241.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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