Infineon OptiMOS 2 Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 6-Pin SOT-363 BSD214SNH6327XTSA1

Infineon OptiMOS 2 Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 6-Pin SOT-363 BSD214SNH6327XTSA1

Manufacturer:
Manufacturer Part No:
BSD214SNH6327XTSA1
Enrgtech Part No:
ET100945131
Warranty:
Manufacturer
SAR 0.06 SAR 0.06
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
1.5A
Maximum Drain Source Voltage Vds:
20V
Package Type:
SOT-363
Series:
OptiMOS 2
Mount Type:
Surface
Pin Count:
6
Maximum Drain Source Resistance Rds:
250mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
0.8nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
12 V
Maximum Power Dissipation Pd:
0.5W
Forward Voltage Vf:
1.1V
Maximum Operating Temperature:
150°C
Width:
1.35 mm
Standards/Approvals:
No
Height:
1mm
Length:
2.02mm
Automotive Standard:
AEC-Q101
pdf icon
A700000007368257.pdf(datasheets)
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