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ipsa70r2k0p7sakma1 Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 5.7 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R2K0P7SAKMA1
ipsa70r2k0p7sakma1 Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 5.7 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R2K0P7SAKMA1

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 5.7 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R2K0P7SAKMA1

Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 5.7 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R2K0P7SAKMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPSA70R2K0P7SAKMA1
Enrgtech Part No:
ET100871199
Warranty:
Manufacturer
SAR 0.23 SAR 0.23
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET & Diode
Maximum Continuous Drain Current Id:
5.7A
Maximum Drain Source Voltage Vds:
700V
Series:
CoolMOS P7
Package Type:
TO-251
Mount Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance Rds:
2Ω
Channel Mode:
Enhancement
Minimum Operating Temperature:
-40°C
Typical Gate Charge Qg @ Vgs:
3.8nC
Maximum Power Dissipation Pd:
17.6W
Maximum Gate Source Voltage Vgs:
16 V
Forward Voltage Vf:
0.9V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Height:
6.1mm
Length:
6.6mm
Width:
2.38 mm
Automotive Standard:
No
pdf icon
A700000007725136.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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