STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG

STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG

Manufacturer:
Manufacturer Part No:
SCT012H90G3AG
Enrgtech Part No:
ET100868867
Warranty:
Manufacturer
SAR 43.37 SAR 43.37
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
110A
Maximum Drain Source Voltage Vds:
400V dc
Series:
13Ω
Package Type:
H2PAK-7
Mount Type:
Surface
Pin Count:
7
Maximum Drain Source Resistance Rds:
12mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
22 V
Forward Voltage Vf:
2.8V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
138nC
Maximum Power Dissipation Pd:
625W
Maximum Operating Temperature:
175°C
Standards/Approvals:
RoHS, AEC-Q101
Length:
15.25mm
Height:
4.8mm
Width:
3 nC @ 4.5 V, 5.5 nC @ 4.5 V
Automotive Standard:
AEC-Q101
pdf icon
A700000012489129.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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