Nexperia Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-263 PSMN4R6-60BS,118

Nexperia Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-263 PSMN4R6-60BS,118

Manufacturer:
Manufacturer Part No:
PSMN4R6-60BS,118
Enrgtech Part No:
ET100828106
Warranty:
Manufacturer
SAR 1.23 SAR 1.23
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
100A
Maximum Drain Source Voltage Vds:
60V
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
7mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
70.8nC
Maximum Power Dissipation Pd:
211W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
175°C
Width:
11 mm
Height:
4.5mm
Length:
10.3mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
0900766b812e05b5.pdf(datasheets)
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0900766b81644fb0.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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