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stb18nm80 STMicroelectronics MDmesh Type N-Channel MOSFET, 17 A, 800 V Enhancement, 3-Pin TO-263 STB18NM80
stb18nm80 STMicroelectronics MDmesh Type N-Channel MOSFET, 17 A, 800 V Enhancement, 3-Pin TO-263 STB18NM80
stb18nm80 STMicroelectronics MDmesh Type N-Channel MOSFET, 17 A, 800 V Enhancement, 3-Pin TO-263 STB18NM80

STMicroelectronics MDmesh Type N-Channel MOSFET, 17 A, 800 V Enhancement, 3-Pin TO-263 STB18NM80

STMicroelectronics MDmesh Type N-Channel MOSFET, 17 A, 800 V Enhancement, 3-Pin TO-263 STB18NM80

Manufacturer:
STMicroelectronics
Manufacturer Part No:
STB18NM80
Enrgtech Part No:
ET100741309
Warranty:
Manufacturer
SAR 3.50 SAR 3.50
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
17A
Maximum Drain Source Voltage Vds:
800V
Series:
MDmesh
Package Type:
TO-263
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
295mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-65°C
Forward Voltage Vf:
1.6V
Typical Gate Charge Qg @ Vgs:
70nC
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
190W
Maximum Operating Temperature:
150°C
Height:
4.6mm
Length:
10.75mm
Standards/Approvals:
No
Width:
3 nC @ 4.5 V, 5.5 nC @ 4.5 V
Automotive Standard:
No
pdf icon
0900766b810ea174.pdf(datasheets)
pdf icon
0900766b81644fb4.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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