ROHM RD3N03BAT Type P-Channel Single MOSFETs, 80 V Enhancement, 3-Pin TO-252 (TL) RD3N03BATTL1

ROHM RD3N03BAT Type P-Channel Single MOSFETs, 80 V Enhancement, 3-Pin TO-252 (TL) RD3N03BATTL1

Manufacturer:
Manufacturer Part No:
RD3N03BATTL1
Enrgtech Part No:
ET100675644
Warranty:
Manufacturer
SAR 0.63 SAR 0.63
Checking for live stock
Product Type:
Single MOSFETs
Channel Type:
Type P
Maximum Drain Source Voltage Vds:
80V
Package Type:
TO-252 (TL)
Series:
RD3N03BAT
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
56mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
54W
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
±20 V
Typical Gate Charge Qg @ Vgs:
50nC
Maximum Operating Temperature:
175°C
Height:
2.3mm
Standards/Approvals:
AEC-Q101, RoHS
Length:
10.50mm
Width:
6.8 mm
Automotive Standard:
AEC-Q101
pdf icon
A700000014473135.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



Product Reviews