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si4559ady-t1-e3 Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SO-8 SI4559ADY-T1-E3
si4559ady-t1-e3 Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SO-8 SI4559ADY-T1-E3

Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SO-8 SI4559ADY-T1-E3

Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SO-8 SI4559ADY-T1-E3

Manufacturer:
Vishay
Manufacturer Part No:
SI4559ADY-T1-E3
Enrgtech Part No:
ET100666521
Warranty:
Manufacturer
SAR 0.41 SAR 0.41
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Product Type:
MOSFET
Channel Type:
Type P, Type N
Maximum Continuous Drain Current Id:
850nm
Maximum Drain Source Voltage Vds:
60V
Package Type:
SO-8
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.58Ω
Channel Mode:
Enhancement
Forward Voltage Vf:
1.2V
Typical Gate Charge Qg @ Vgs:
6nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Power Dissipation Pd:
3.4W
Transistor Configuration:
Dual
Maximum Operating Temperature:
150°C
Length:
5mm
Height:
1.75mm
Standards/Approvals:
IEC 61249-2-21
Width:
4 mm
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
A700000006404085.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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