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dmn10h099sk3-13 DiodesZetex DMN10H099SK3 Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-252 DMN10H099SK3-13
dmn10h099sk3-13 DiodesZetex DMN10H099SK3 Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-252 DMN10H099SK3-13
dmn10h099sk3-13 DiodesZetex DMN10H099SK3 Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-252 DMN10H099SK3-13

DiodesZetex DMN10H099SK3 Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-252 DMN10H099SK3-13

DiodesZetex DMN10H099SK3 Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-252 DMN10H099SK3-13

Manufacturer:
DiodesZetex
Manufacturer Part No:
DMN10H099SK3-13
Enrgtech Part No:
ET100648763
Warranty:
Manufacturer
SAR 0.35 SAR 0.35
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
17A
Maximum Drain Source Voltage Vds:
100V
Series:
DMN10H099SK3
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
99mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
0.77V
Typical Gate Charge Qg @ Vgs:
25.2nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
34W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Width:
6.7 mm
Length:
6.2mm
Height:
2.39mm
Automotive Standard:
AEC-Q101
pdf icon
0900766b814b9196.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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