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dmc3026lsd-13 DiodesZetex Isolated 2 Type P, Type N-Channel MOSFET, 8.2 A, 30 V Enhancement, 8-Pin SOIC DMC3026LSD-13
dmc3026lsd-13 DiodesZetex Isolated 2 Type P, Type N-Channel MOSFET, 8.2 A, 30 V Enhancement, 8-Pin SOIC DMC3026LSD-13
dmc3026lsd-13 DiodesZetex Isolated 2 Type P, Type N-Channel MOSFET, 8.2 A, 30 V Enhancement, 8-Pin SOIC DMC3026LSD-13

DiodesZetex Isolated 2 Type P, Type N-Channel MOSFET, 8.2 A, 30 V Enhancement, 8-Pin SOIC DMC3026LSD-13

DiodesZetex Isolated 2 Type P, Type N-Channel MOSFET, 8.2 A, 30 V Enhancement, 8-Pin SOIC DMC3026LSD-13

Manufacturer:
DiodesZetex
Manufacturer Part No:
DMC3026LSD-13
Enrgtech Part No:
ET100648611
Warranty:
Manufacturer
SAR 0.45 SAR 0.45
Checking for live stock
Channel Type:
Type P, Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
8.2A
Maximum Drain Source Voltage Vds:
30V
Package Type:
SOIC
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
29mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
6nC
Minimum Operating Temperature:
150°C
Forward Voltage Vf:
4.9 x 3.9 x 1.65mm
Maximum Power Dissipation Pd:
1.6W
Maximum Gate Source Voltage Vgs:
20 V
Transistor Configuration:
Isolated
Maximum Operating Temperature:
-55°C
Length:
4.95mm
Width:
3.95 mm
Height:
1.5mm
Standards/Approvals:
MIL-STD-202, AEC-Q101, UL 94V-0, RoHS, J-STD-020
Number of Elements per Chip:
2
Automotive Standard:
AEC-Q101
pdf icon
0900766b814b9189.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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