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sihk185n60e-t1-ge3 Vishay Type N-Channel MOSFET, 19 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK185N60E-T1-GE3
sihk185n60e-t1-ge3 Vishay Type N-Channel MOSFET, 19 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK185N60E-T1-GE3

Vishay Type N-Channel MOSFET, 19 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK185N60E-T1-GE3

Vishay Type N-Channel MOSFET, 19 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK185N60E-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIHK185N60E-T1-GE3
Enrgtech Part No:
ET100647984
Warranty:
Manufacturer
SAR 3.96 SAR 3.96
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
19A
Maximum Drain Source Voltage Vds:
650V
Package Type:
PowerPAK 10 x 12
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.05mΩ
Channel Mode:
Depletion
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
132W
Forward Voltage Vf:
1.1V
Typical Gate Charge Qg @ Vgs:
6.49kΩ
Maximum Operating Temperature:
175°C
Length:
6.15mm
Standards/Approvals:
No
Width:
5.15 mm
Automotive Standard:
AEC-Q101
pdf icon
A700000009140031.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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