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dmn3190ldwq-7 DiodesZetex Dual DMN3190LDWQ 1 Type N-Channel MOSFET, 1 A, 30 V Enhancement, 6-Pin SOT-363 DMN3190LDWQ-7
dmn3190ldwq-7 DiodesZetex Dual DMN3190LDWQ 1 Type N-Channel MOSFET, 1 A, 30 V Enhancement, 6-Pin SOT-363 DMN3190LDWQ-7

DiodesZetex Dual DMN3190LDWQ 1 Type N-Channel MOSFET, 1 A, 30 V Enhancement, 6-Pin SOT-363 DMN3190LDWQ-7

DiodesZetex Dual DMN3190LDWQ 1 Type N-Channel MOSFET, 1 A, 30 V Enhancement, 6-Pin SOT-363 DMN3190LDWQ-7

Manufacturer:
DiodesZetex
Manufacturer Part No:
DMN3190LDWQ-7
Enrgtech Part No:
ET100644058
Warranty:
Manufacturer
SAR 0.30 SAR 0.30
Checking for live stock
Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
1A
Maximum Drain Source Voltage Vds:
30V
Package Type:
SOT-363
Series:
DMN3190LDWQ
Mount Type:
Surface
Pin Count:
6
Maximum Drain Source Resistance Rds:
0.19Ω
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
0.9nC
Maximum Power Dissipation Pd:
0.4W
Forward Voltage Vf:
1.2V
Transistor Configuration:
Dual
Maximum Operating Temperature:
150°C
Length:
2.15mm
Height:
0.95mm
Width:
2.1 mm
Standards/Approvals:
UL 94V-0, AEC-Q101, RoHS, MIL-STD-202, J-STD-020
Number of Elements per Chip:
1
Automotive Standard:
AEC-Q101
pdf icon
A700000007763861.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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