Vishay Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 3.9 A, 20 V Enhancement, 6-Pin TSOP SI3585CDV-T1-GE3

For more information please check the datasheets.

Vishay Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 3.9 A, 20 V Enhancement, 6-Pin TSOP SI3585CDV-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SI3585CDV-T1-GE3

Enrgtech Part No:

ET100631250

Warranty:

Manufacturer

SAR 0.29

Checking for live stock

Channel Type:

Type N, Type P

Product Type:

MOSFET

Maximum Continuous Drain Current Id:

3.9A

Maximum Drain Source Voltage Vds:

20V

Package Type:

TSOP

Series:

TrenchFET

Mount Type:

Surface

Pin Count:

Channel Mode:

Enhancement

Minimum Operating Temperature:

-55°C

Typical Gate Charge Qg @ Vgs:

3.2nC

Maximum Gate Source Voltage Vgs:

12 V

A700000006403517.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 3.9 A, 20 V Enhancement, 6-Pin TSOP SI3585CDV-T1-GE3

Product Reviews