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si7956dp-t1-ge3 Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3
si7956dp-t1-ge3 Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3

Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3

Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI7956DP-T1-GE3
Enrgtech Part No:
ET100630931
Warranty:
Manufacturer
SAR 2.29 SAR 2.29
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
4.1A
Maximum Drain Source Voltage Vds:
150V
Package Type:
PowerPack
Series:
SI7956DP
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
0.1Ω
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
3.5W
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Typical Gate Charge Qg @ Vgs:
17nC
Minimum Operating Temperature:
-50°C
Transistor Configuration:
Dual
Maximum Operating Temperature:
150°C
Length:
6.25mm
Height:
1.12mm
Standards/Approvals:
No
Width:
5.26 mm
Automotive Standard:
No
pdf icon
A700000006403249.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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