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si1401edh-t1-ge3 Vishay TrenchFET Type P-Channel MOSFET, 4 A, 12 V Enhancement, 6-Pin SOT-363 SI1401EDH-T1-GE3
si1401edh-t1-ge3 Vishay TrenchFET Type P-Channel MOSFET, 4 A, 12 V Enhancement, 6-Pin SOT-363 SI1401EDH-T1-GE3

Vishay TrenchFET Type P-Channel MOSFET, 4 A, 12 V Enhancement, 6-Pin SOT-363 SI1401EDH-T1-GE3

Vishay TrenchFET Type P-Channel MOSFET, 4 A, 12 V Enhancement, 6-Pin SOT-363 SI1401EDH-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI1401EDH-T1-GE3
Enrgtech Part No:
ET100630914
Warranty:
Manufacturer
SAR 0.33 SAR 0.33
Checking for live stock
Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
4A
Maximum Drain Source Voltage Vds:
12V
Package Type:
SOT-363
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
6
Maximum Drain Source Resistance Rds:
34mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1.2V
Maximum Gate Source Voltage Vgs:
10 V
Typical Gate Charge Qg @ Vgs:
14.1nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
1.8W
Maximum Operating Temperature:
150°C
Width:
2.4 mm
Standards/Approvals:
No
Length:
2.2mm
Height:
1.1mm
Automotive Standard:
No
pdf icon
A700000006403525.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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