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si2399ds-t1-ge3 Vishay TrenchFET Type P-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SI2399DS-T1-GE3
si2399ds-t1-ge3 Vishay TrenchFET Type P-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SI2399DS-T1-GE3

Vishay TrenchFET Type P-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SI2399DS-T1-GE3

Vishay TrenchFET Type P-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SI2399DS-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI2399DS-T1-GE3
Enrgtech Part No:
ET100622188
Warranty:
Manufacturer
SAR 0.36 SAR 0.36
Checking for live stock
Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
6A
Maximum Drain Source Voltage Vds:
20V
Package Type:
SOT-23
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
67mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Typical Gate Charge Qg @ Vgs:
WR-MPC3
Maximum Power Dissipation Pd:
1.6W
Forward Voltage Vf:
-1.2V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Height:
1.12mm
Width:
2.64 mm
Standards/Approvals:
No
Length:
3.04mm
Automotive Standard:
No
pdf icon
A700000006403265.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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