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si5515cdc-t1-ge3 Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 20 V Enhancement, 8-Pin TSOP SI5515CDC-T1-GE3
si5515cdc-t1-ge3 Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 20 V Enhancement, 8-Pin TSOP SI5515CDC-T1-GE3

Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 20 V Enhancement, 8-Pin TSOP SI5515CDC-T1-GE3

Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 20 V Enhancement, 8-Pin TSOP SI5515CDC-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SI5515CDC-T1-GE3
Enrgtech Part No:
ET100622006
Warranty:
Manufacturer
SAR 0.49 SAR 0.49
Checking for live stock
Channel Type:
Type P, Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
4A
Maximum Drain Source Voltage Vds:
20V
Series:
TrenchFET
Package Type:
TSOP
Mount Type:
Surface
Pin Count:
8
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
3.1W
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
8 V
Typical Gate Charge Qg @ Vgs:
7.5nC
Transistor Configuration:
Dual
Maximum Operating Temperature:
150°C
Length:
3.05mm
Height:
1mm
Width:
1.65 mm
Standards/Approvals:
No
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
A700000006403437.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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