Nexperia BUK9M8560E Type N-Channel MOSFET, 12.8 A, 60 V Enhancement, 4-Pin LFPAK

Nexperia BUK9M8560E Type N-Channel MOSFET, 12.8 A, 60 V Enhancement, 4-Pin LFPAK

Manufacturer:
Manufacturer Part No:
BUK9M85-60EX
Enrgtech Part No:
ET100557492
Warranty:
Manufacturer
SAR 0.27 SAR 0.27
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
12.8A
Maximum Drain Source Voltage Vds:
60V
Package Type:
LFPAK
Series:
BUK9M8560E
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
192mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
31W
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
15 V
Typical Gate Charge Qg @ Vgs:
4.4nC
Maximum Operating Temperature:
175°C
Height:
0.9mm
Width:
10 kΩ
Length:
3.4mm
Standards/Approvals:
No
Automotive Standard:
AEC-Q101
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0900766b815f54af.pdf(datasheets)
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0900766b81644fb2.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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