Vishay E Type N-Channel MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3

For more information please check the datasheets.

Vishay E Type N-Channel MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3

Manufacturer:

Vishay

Manufacturer Part No:

SIHK125N60E-T1-GE3

Enrgtech Part No:

ET100547731

Warranty:

Manufacturer

SAR 4.52

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Product Type:

MOSFET

Channel Type:

Type N

Maximum Continuous Drain Current Id:

21A

Maximum Drain Source Voltage Vds:

650V

Series:

Package Type:

PowerPAK 10 x 12

Mount Type:

Surface

Pin Count:

Maximum Drain Source Resistance Rds:

0.11Ω

Channel Mode:

Depletion

Forward Voltage Vf:

1.2V

Maximum Gate Source Voltage Vgs:

30 V

A700000008654530.pdf(datasheets)

Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.

Vishay E Type N-Channel MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3

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