Vishay EF Type N-Channel MOSFET, 26 A, 650 V Depletion, 4-Pin PowerPAK 8 x 8 SiHH105N60EF-T1GE3

Vishay EF Type N-Channel MOSFET, 26 A, 650 V Depletion, 4-Pin PowerPAK 8 x 8 SiHH105N60EF-T1GE3

Manufacturer:
Manufacturer Part No:
SiHH105N60EF-T1GE3
Enrgtech Part No:
ET100547719
Warranty:
Manufacturer
SAR 4.95 SAR 4.95
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
26A
Maximum Drain Source Voltage Vds:
650V
Package Type:
PowerPAK 8 x 8
Series:
EF
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
0.09Ω
Channel Mode:
Depletion
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
30 V
Maximum Power Dissipation Pd:
174W
Forward Voltage Vf:
1.2V
Typical Gate Charge Qg @ Vgs:
3 x 1 x 2mm
Maximum Operating Temperature:
125°C
Standards/Approvals:
No
Automotive Standard:
AEC-Q101
pdf icon
A700000008654498.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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