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si2319cds-t1-ge3 Vishay Si2319CDS Type P-Channel MOSFET, 4.4 A, 40 V Enhancement, 3-Pin SOT-23
si2319cds-t1-ge3 Vishay Si2319CDS Type P-Channel MOSFET, 4.4 A, 40 V Enhancement, 3-Pin SOT-23

Vishay Si2319CDS Type P-Channel MOSFET, 4.4 A, 40 V Enhancement, 3-Pin SOT-23

Vishay Si2319CDS Type P-Channel MOSFET, 4.4 A, 40 V Enhancement, 3-Pin SOT-23

Manufacturer:
Vishay
Manufacturer Part No:
SI2319CDS-T1-GE3
Enrgtech Part No:
ET100536311
Warranty:
Manufacturer
SAR 0.17 SAR 0.17
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
HLMP-Q800
Maximum Drain Source Voltage Vds:
40V
Package Type:
SOT-23
Series:
Si2319CDS
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
108mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
-1.2V
Typical Gate Charge Qg @ Vgs:
13.6nC
Minimum Operating Temperature:
-55°C
Maximum Power Dissipation Pd:
2.5W
Maximum Gate Source Voltage Vgs:
20 V
Maximum Operating Temperature:
150°C
Height:
1.02mm
Width:
1.4 mm
Standards/Approvals:
No
Length:
3.04mm
Automotive Standard:
No
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Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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