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si2333dds-t1-ge3 Vishay Si2333DDS Type P-Channel MOSFET, 6 A, 12 V Enhancement, 3-Pin SOT-23
si2333dds-t1-ge3 Vishay Si2333DDS Type P-Channel MOSFET, 6 A, 12 V Enhancement, 3-Pin SOT-23
si2333dds-t1-ge3 Vishay Si2333DDS Type P-Channel MOSFET, 6 A, 12 V Enhancement, 3-Pin SOT-23

Vishay Si2333DDS Type P-Channel MOSFET, 6 A, 12 V Enhancement, 3-Pin SOT-23

Vishay Si2333DDS Type P-Channel MOSFET, 6 A, 12 V Enhancement, 3-Pin SOT-23

Manufacturer:
Vishay
Manufacturer Part No:
SI2333DDS-T1-GE3
Enrgtech Part No:
ET100536310
Warranty:
Manufacturer
SAR 0.09 SAR 0.09
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
6A
Maximum Drain Source Voltage Vds:
12V
Series:
Si2333DDS
Package Type:
SOT-23
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
19Ω
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
-1.2V
Typical Gate Charge Qg @ Vgs:
3.2 x 4.5mm
Maximum Gate Source Voltage Vgs:
8 V
Maximum Power Dissipation Pd:
1.7W
Maximum Operating Temperature:
150°C
Width:
1.4 mm
Height:
1.02mm
Standards/Approvals:
No
Length:
3.04mm
Automotive Standard:
No
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0900766b814ae481.pdf(datasheets)
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0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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