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si4925ddy-t1-ge3 Vishay Isolated TrenchFET 2 Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC
si4925ddy-t1-ge3 Vishay Isolated TrenchFET 2 Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC
si4925ddy-t1-ge3 Vishay Isolated TrenchFET 2 Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC

Vishay Isolated TrenchFET 2 Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC

Vishay Isolated TrenchFET 2 Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC

Manufacturer:
Vishay
Manufacturer Part No:
SI4925DDY-T1-GE3
Enrgtech Part No:
ET100536307
Warranty:
Manufacturer
SAR 0.35 SAR 0.35
Checking for live stock
Channel Type:
Type P
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
8A
Maximum Drain Source Voltage Vds:
30V
Package Type:
SOIC
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
14MHz
Channel Mode:
Enhancement
Minimum Operating Temperature:
150°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
5W
Typical Gate Charge Qg @ Vgs:
32nC
Maximum Operating Temperature:
-55°C
Transistor Configuration:
Isolated
Standards/Approvals:
No
Width:
4 mm
Length:
5mm
Height:
1.5mm
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b814ae49e.pdf(datasheets)
pdf icon
0900766b81644fb1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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