Product Type:
Power MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
3.8A
Maximum Drain Source Voltage Vds:
20V
Package Type:
UDFN
Mount Type:
Surface
Pin Count:
6
Maximum Drain Source Resistance Rds:
137mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
8 V
Maximum Power Dissipation Pd:
1.4W
Minimum Operating Temperature:
150°C
Forward Voltage Vf:
-0.7V
Typical Gate Charge Qg @ Vgs:
8.8nC
Maximum Operating Temperature:
-55°C
Transistor Configuration:
Dual
Standards/Approvals:
J-STD-020, MIL-STD-202, AEC-Q101, RoHS, UL 94V-0
Length:
2.07mm
Width:
2.07 mm
Height:
0.55mm
Number of Elements per Chip:
2
Automotive Standard:
AEC-Q101, AEC-Q200, AEC-Q100
