Vishay Si2329DS Type P-Channel MOSFET, -6 A, -8 V, 3-Pin SOT-23 SI2329DS-T1-GE3

Vishay Si2329DS Type P-Channel MOSFET, -6 A, -8 V, 3-Pin SOT-23 SI2329DS-T1-GE3

Manufacturer:
Manufacturer Part No:
SI2329DS-T1-GE3
Enrgtech Part No:
ET100500317
Warranty:
Manufacturer
SAR 0.44 SAR 0.44
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Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
-6A
Maximum Drain Source Voltage Vds:
-8V
Package Type:
SOT-23
Series:
Si2329DS
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
0.12Ω
Maximum Power Dissipation Pd:
2.5W
Maximum Gate Source Voltage Vgs:
5 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
19.3nC
Maximum Operating Temperature:
150°C
Length:
3.04mm
Width:
1.4 mm
Standards/Approvals:
IEC 61249-2-21, RoHS
Height:
1.12mm
Automotive Standard:
No
pdf icon
A700000009381552.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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