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si4554dy-t1-ge3 Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin SOIC
si4554dy-t1-ge3 Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin SOIC

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin SOIC

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin SOIC

Manufacturer:
Vishay
Manufacturer Part No:
SI4554DY-T1-GE3
Enrgtech Part No:
ET100486405
Warranty:
Manufacturer
SAR 0.25 SAR 0.25
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type P, Type N
Maximum Continuous Drain Current Id:
8A
Maximum Drain Source Voltage Vds:
40V
Package Type:
SOIC
Series:
TrenchFET
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
34mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
3.2W
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
150°C
Typical Gate Charge Qg @ Vgs:
13.3nC
Transistor Configuration:
Isolated
Maximum Operating Temperature:
-55°C
Standards/Approvals:
No
Width:
4 mm
Height:
1.5mm
Length:
5mm
Number of Elements per Chip:
2
Automotive Standard:
No
pdf icon
0900766b8126ce53.pdf(datasheets)
pdf icon
0900766b81644fb3.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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