ROHM BM2P Type N-Channel MOSFET, 4 A, 730 V Enhancement, 7-Pin DIP-7K BM2P10A3J-Z

ROHM BM2P Type N-Channel MOSFET, 4 A, 730 V Enhancement, 7-Pin DIP-7K BM2P10A3J-Z

Manufacturer:
Manufacturer Part No:
BM2P10A3J-Z
Enrgtech Part No:
ET100378342
Warranty:
Manufacturer
SAR 1.05 SAR 1.05
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
4A
Maximum Drain Source Voltage Vds:
730V
Series:
BM2P
Package Type:
3.1 V
Mount Type:
Through Hole
Pin Count:
7
Maximum Drain Source Resistance Rds:
3.6Ω
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
1W
Minimum Operating Temperature:
-40°C
Maximum Gate Source Voltage Vgs:
1.8 x 1.35 x 1mm
Maximum Operating Temperature:
105°C
Standards/Approvals:
RoHS
Width:
6.35 mm
Length:
9.27mm
Height:
8.63mm
Automotive Standard:
No
pdf icon
A700000012923838.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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