ROHM HP8KE5 Dual N-Channel MOSFET, 8.5 A, 100 V Enhancement, 8-Pin HSOP-8 HP8KE5TB1

ROHM HP8KE5 Dual N-Channel MOSFET, 8.5 A, 100 V Enhancement, 8-Pin HSOP-8 HP8KE5TB1

Manufacturer:
Manufacturer Part No:
HP8KE5TB1
Enrgtech Part No:
ET100377588
Warranty:
Manufacturer
SAR 0.54 SAR 0.54
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Product Type:
MOSFET
Channel Type:
Dual N
Maximum Continuous Drain Current Id:
8.5A
Maximum Drain Source Voltage Vds:
100V
Series:
HP8KE5
Package Type:
7.3 x 2.5 x 6.5mm
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
193mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
20W
Forward Voltage Vf:
1.2V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
2.9nC
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000012923839.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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