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rq3n060attb1 ROHM RQ3N060AT Type P-Channel MOSFET, 18 A, 80 V Enhancement, 8-Pin HSOP-8 RQ3N060ATTB1
rq3n060attb1 ROHM RQ3N060AT Type P-Channel MOSFET, 18 A, 80 V Enhancement, 8-Pin HSOP-8 RQ3N060ATTB1

ROHM RQ3N060AT Type P-Channel MOSFET, 18 A, 80 V Enhancement, 8-Pin HSOP-8 RQ3N060ATTB1

ROHM RQ3N060AT Type P-Channel MOSFET, 18 A, 80 V Enhancement, 8-Pin HSOP-8 RQ3N060ATTB1

Manufacturer:
ROHM
Manufacturer Part No:
RQ3N060ATTB1
Enrgtech Part No:
ET100377586
Warranty:
Manufacturer
SAR 0.57 SAR 0.57
Checking for live stock
Product Type:
MOSFET
Channel Type:
Type P
Maximum Continuous Drain Current Id:
18A
Maximum Drain Source Voltage Vds:
80V
Series:
RQ3N060AT
Package Type:
7.3 x 2.5 x 6.5mm
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
52mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
-1.2V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
20W
Typical Gate Charge Qg @ Vgs:
50nC
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000012920559.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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