ROHM HP8KC5 Dual N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin HSOP-8 HP8KC5TB1

ROHM HP8KC5 Dual N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin HSOP-8 HP8KC5TB1

Manufacturer:
Manufacturer Part No:
HP8KC5TB1
Enrgtech Part No:
ET100377585
Warranty:
Manufacturer
SAR 0.53 SAR 0.53
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Product Type:
MOSFET
Channel Type:
Dual N
Maximum Continuous Drain Current Id:
12A
Maximum Drain Source Voltage Vds:
60V
Package Type:
7.3 x 2.5 x 6.5mm
Series:
HP8KC5
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
139mΩ
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
3.1nC
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
20W
Forward Voltage Vf:
1.2V
Maximum Operating Temperature:
150°C
Standards/Approvals:
Pb-Free Plating, RoHS
Automotive Standard:
No
pdf icon
A700000012923824.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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