ROHM HT8KE5H Dual N-Channel MOSFET, 6.5 A, 100 V Enhancement, 8-Pin HSOP-8 HT8KE5HTB1

ROHM HT8KE5H Dual N-Channel MOSFET, 6.5 A, 100 V Enhancement, 8-Pin HSOP-8 HT8KE5HTB1

Manufacturer:
Manufacturer Part No:
HT8KE5HTB1
Enrgtech Part No:
ET100377584
Warranty:
Manufacturer
SAR 0.48 SAR 0.48
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Channel Type:
Dual N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
6.5A
Maximum Drain Source Voltage Vds:
100V
Package Type:
7.3 x 2.5 x 6.5mm
Series:
HT8KE5H
Mount Type:
Surface
Pin Count:
8
Maximum Drain Source Resistance Rds:
210mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
13W
Forward Voltage Vf:
1.2V
Typical Gate Charge Qg @ Vgs:
3.7nC
Maximum Operating Temperature:
150°C
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000012923859.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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