Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252

Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252

Manufacturer:
Manufacturer Part No:
IPD50R800CEAUMA1
Enrgtech Part No:
ET100348068
Warranty:
Manufacturer
SAR 0.18 SAR 0.18
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
5A
Maximum Drain Source Voltage Vds:
500V
Series:
IPD50R
Package Type:
TO-252
Mount Type:
Surface
Pin Count:
3
Maximum Drain Source Resistance Rds:
800mΩ
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
40W
Typical Gate Charge Qg @ Vgs:
12.4nC
Minimum Operating Temperature:
-55°C
Forward Voltage Vf:
2 x 2 x 0.5mm
Maximum Operating Temperature:
150°C
Height:
2.41mm
Width:
6.22 mm
Length:
6.73mm
Standards/Approvals:
No
Automotive Standard:
No
pdf icon
A700000007834867.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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