Infineon HEXFET Type N-Channel MOSFET, 100 A, 25 V Enhancement, 4-Pin PQFN IRFH5250TRPBF

Infineon HEXFET Type N-Channel MOSFET, 100 A, 25 V Enhancement, 4-Pin PQFN IRFH5250TRPBF

Manufacturer:
Manufacturer Part No:
IRFH5250TRPBF
Enrgtech Part No:
ET100347583
Warranty:
Manufacturer
SAR 1.05 SAR 1.05
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Product Type:
MOSFET
Channel Type:
Type N
Maximum Continuous Drain Current Id:
100A
Maximum Drain Source Voltage Vds:
25V
Package Type:
PQFN
Series:
HEXFET
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
1.15mΩ
Channel Mode:
Enhancement
Maximum Power Dissipation Pd:
3.6W
Typical Gate Charge Qg @ Vgs:
52nC
Forward Voltage Vf:
1V
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Maximum Operating Temperature:
150°C
Length:
6mm
Height:
0.9mm
Width:
4.75 mm
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000007835699.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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