Infineon HEXFET Type N-Channel MOSFET, 30 A, 80 V Enhancement, 4-Pin PQFN IRFH8311TRPBF

Infineon HEXFET Type N-Channel MOSFET, 30 A, 80 V Enhancement, 4-Pin PQFN IRFH8311TRPBF

Manufacturer:
Manufacturer Part No:
IRFH8311TRPBF
Enrgtech Part No:
ET100347574
Warranty:
Manufacturer
SAR 0.67 SAR 0.67
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
30A
Maximum Drain Source Voltage Vds:
80V
Series:
HEXFET
Package Type:
PQFN
Mount Type:
Surface
Pin Count:
4
Maximum Drain Source Resistance Rds:
2.1mΩ
Channel Mode:
Enhancement
Forward Voltage Vf:
1V
Maximum Gate Source Voltage Vgs:
20 V
Minimum Operating Temperature:
-55°C
Typical Gate Charge Qg @ Vgs:
30nC
Maximum Power Dissipation Pd:
96W
Maximum Operating Temperature:
150°C
Width:
6.15 mm
Height:
1.17mm
Length:
5mm
Standards/Approvals:
RoHS
Automotive Standard:
No
pdf icon
A700000007834687.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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