Infineon Dual FF6MR 1 Type N-Channel MOSFET, 250 A, 1200 V Enhancement AG-62MM FF6MR12KM1BOSA1

Infineon Dual FF6MR 1 Type N-Channel MOSFET, 250 A, 1200 V Enhancement AG-62MM FF6MR12KM1BOSA1

Manufacturer:
Manufacturer Part No:
FF6MR12KM1BOSA1
Enrgtech Part No:
ET100347439
Warranty:
Manufacturer
SAR 644.96 SAR 644.96
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Channel Type:
Type N
Product Type:
MOSFET
Maximum Continuous Drain Current Id:
250A
Maximum Drain Source Voltage Vds:
1200V
Series:
FF6MR
Package Type:
AG-62MM
Mount Type:
Chassis
Maximum Drain Source Resistance Rds:
5.81mΩ
Channel Mode:
Enhancement
Minimum Operating Temperature:
-40°C
Forward Voltage Vf:
5.85V
Maximum Gate Source Voltage Vgs:
20 V
Maximum Power Dissipation Pd:
20mW
Transistor Configuration:
Dual
Maximum Operating Temperature:
150°C
Standards/Approvals:
No
Number of Elements per Chip:
1
Automotive Standard:
No
pdf icon
A700000007833711.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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